K4S641632E Datasheet, PDF (2/10 Pages) Samsung semiconductor – 64Mbit SDRAM

K4S641632E
CMOS SDRAM
1M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system
clock
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
The K4S641632E is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 1,048,576 words by 16
bits, fabricated with SAMSUNG′s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
ORDERING INFORMATION
Part No.
Max Freq. Interface Package
K4S641632E-TC50/TL50 200MHz(CL=3)
K4S641632E-TC55/TL55 183MHz(CL=3)
K4S641632E-TC60/TL60
K4S641632E-TC70/TL70
K4S641632E-TC75/TL75
166MHz(CL=3)
143MHz(CL=3)
133MHz(CL=3)
LVTTL
54
TSOP(II)
K4S641632E-TC1H/TL1H 100MHz(CL=2)
K4S641632E-TC1L/TL1L 100MHz(CL=3)
Data Input Register
Bank Select
CLK
ADD
LCKE
LRAS
LCBR
LWE
LCAS
1M x 16
1M x 16
1M x 16
1M x 16
Column Decoder
Latency & Burst Length
Programming Register
LWCBR
Timing Register
LWE
LDQM
DQi
LDQM
CLK
CKE
CS
RAS
CAS
WE L(U)DQM
* ^{Samsung Electronics reserves the right to change products or specification without notice.}
Rev.0.2 Sept. 2001