K4S561632D Datasheet, PDF (5/11 Pages) Samsung semiconductor – 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL

K4S561632D
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, V OUT
VDD, VDDQ
T STG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -0 to 70°C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
VDD , VDDQ
VIH
VIL
VO H
VOL
ILI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ
Max
Unit
3.3
3.6
V
3.0
V DD+0.3
V
0
0.8
V
-
-
V
-
0.4
V
-
10
uA
Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ .
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. The VDD condition of K4S561632C-60 is 3.135V~3.6V.
Note
4
1
2
IOH = -2mA
IOL = 2mA
3
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Clock
RAS , CAS, WE, CS, CKE, DQM
Address
D Q 0 ~ DQ 15
Symbol
Min
CCLK
2.5
C IN
2.5
CADD
2.5
COUT
4.0
Notes : 1. -75/7C only specify a maximum value of 3.5pF
2. -75/7C only specify a maximum value of 3.8pF
3. -75/7C only specify a maximum value of 6.0pF
Max
4.0
5.0
5.0
6.5
Unit
pF
pF
pF
pF
Note
1
2
2
3
Rev. 0.1 Aug. 2002