K4S511633C Datasheet, PDF (5/8 Pages) Samsung semiconductor – 32Mx16 Mobile SDRAM 54CSP 1/CS

K4S511633C-YL/N/P
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA =Commercial, Extended and Industrial)
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
ICC1
Burst length = 1
tRC ≥ tR C(min)
IO = 0 mA
Version
-80
-1H
-1L
160
155
145
Precharge Standby Current ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
2
in power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
2
Precharge Standby Current
IC C 2 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
35
in non power-down mode
I C C 2NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
25
Active Standby Current
ICC3P CKE ≤ VIL(max), tCC = 10ns
15
in power-down mode
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
15
Active Standby Current
IC C 3 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
50
in non power-down mode
(One Bank Active)
I C C 3NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
45
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
ICC4
ICC5
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
tRC ≥ tR C(min)
ICC6 CKE ≤ 0.2V
230
210
210
350
335
305
-YL
-YN
1800
-YP
Unit Note
mA 1
mA
mA
mA
mA
mA
mA 1
mA 2
3
uA 4
5
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S511633C-YL**
4. K4S511633C-YN**
5. K4S511633C-YP**
6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
Rev. 1.2 Dec. 2002