K4M64163PK Datasheet, PDF (5/12 Pages) Samsung semiconductor – 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M64163PK - R(B)E/G/C/F
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to VSS = 0V, TA = -25°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
Parameter
Symbol
Test Condition
Version
-75 -90 -1L
Unit Note
Operating Current
(One Bank Active)
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
30
30
30 mA 1
Precharge Standby Current in ^{ICC2P CKE ≤ VIL(max), tCC = 10ns}
power-down mode
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.3
mA
0.3
Precharge Standby Current
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
6.5
in non power-down mode
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
1
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
5
mA
2
Active Standby Current
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
12
mA
in non power-down mode
(One Bank Active)
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
4
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
50
45
45 mA 1
Refresh Current
Self Refresh Current
ICC5 tARFC ≥ tARFC(min)
ICC6 CKE ≤ 0.2V
50
50
50 mA 2
TCSR
Full
45 ^*3
140
85/70
°C
220
-E/C 1/2 of
130
190
4
1/4 of
125
Full
90
175
uA
180
-G/F 1/2 of
80
150
5
1/4 of
75
135
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. It has +/-5 °C tolerance.
4. K4M64163PK-R(B)E/C**
5. K4M64163PK-R(B)G/F**
6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
5
October 2005