K4M64163PK Datasheet, PDF (12/12 Pages) Samsung semiconductor – 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M64163PK - R(B)E/G/C/F
Mobile-SDRAM
C. BURST SEQUENCE
1. BURST LENGTH = 4
Initial Address
A1
A0
Sequential
Interleave
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
2. BURST LENGTH = 8
Initial Address
A2 A1 A0
Sequential
Interleave
0
0
0
0123456701234567
0
0
1
1234567010325476
0
1
0
2345670123016745
0
1
1
3456701232107654
1
0
0
4567012345670123
1
0
1
5670123454761032
1
1
0
6701234567452301
1
1
1
7012345676543210
NOTE :
1. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose,
such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
12
October 2005