K4H510838B-N Datasheet, PDF (5/24 Pages) Samsung semiconductor – 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)

DDR SDRAM 512Mb B-die (x8)
4.0 Pin Description
DDR SDRAM
64Mb x 8
VDD
DQ0
VDDQ
DQ1
VSSQ
DQ2
VDDQ
DQ3
VSSQ
NC
VDDQ
NC
NC
VDD
WE
CAS
RAS
CS
NC
BA0
BA1
AP/A10
A0
A1
A2
A3
VDD
1
54
2
53
3
52
4
51
5
50
6
49
7
48
8
47
9
54 Pin sTSOP(II)
46
10
400mil x 441mil
45
11
44
12
(0.4 mm Pin Pitch)
43
13
42
14
Bank Address
41
BA0-BA1
15
40
16
Row Address
39
17
A0-A12
38
18
37
19
Auto Precharge
36
20
A10
35
21
34
22
33
23
32
24
31
25
30
26
29
27
28
512Mb sTSOP(II)-400 Package Pinout
VSS
DQ7
VSSQ
DQ6
VDDQ
DQ5
VSSQ
DQ4
VDDQ
NC
VSSQ
DQS
VREF
VSS
DM
CK
CK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
Organization
64Mx8
Row Address
A0~A12
Column Address
A0-A9, A11
DM is internally loaded to match DQ and DQS identically.
Row & Column address configuration
Rev. 1.3 June. 2005