K4E660412E Datasheet, PDF (5/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

Industrial Temperature
K4E660412E,K4E640412E
CAPACITANCE (TA=25°C, VCC=3.3V, f=1MHz)
Parameter
Input capacitance [A0 ~ A12]
Input capacitance [RAS , CAS, W, OE ]
Output capacitance [DQ0 - DQ3]
Symbol
CIN1
CIN2
CDQ
AC CHARACTERISTICS (-40°C≤TA≤85°C, See note 2)
Test condition : VC C=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
OE to output in Low-Z
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
tRC
tRWC
tRAC
tCAC
tAA
t CLZ
tCEZ
tOLZ
tT
tR P
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tW P
tRWL
tCWL
tD S
74
101
45
12
23
3
3
13
3
1
50
25
45 10K
8
35
7
5K
11
33
9
22
5
0
7
0
7
23
0
0
0
7
6
8
7
0
Min
-
-
-
-50
Min Max
84
113
50
13
25
3
3
13
3
1
50
30
50 10K
8
38
8
10K
11
37
9
25
5
0
7
0
7
25
0
0
0
7
7
8
7
0
CMOS DRAM
Max
Units
5
pF
7
pF
7
pF
-60
Min Max
104
138
60
15
30
3
3
13
3
1
50
40
60 10K
10
40
10 10K
14
45
12
30
5
0
10
0
10
30
0
0
0
10
10
10
10
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
3,4,10,12
3,4,5,12
3,10,12
3
6,13
3
2
16
4
10
8
8
9