K4E660412E Datasheet, PDF (18/21 Pages) Samsung semiconductor – 16M x 4bit CMOS Dynamic RAM with Extended Data Out

Industrial Temperature
K4E660412E,K4E640412E
HIDDEN REFRESH CYCLE ( READ )
CMOS DRAM
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ3(7)
VO H -
VOL -
tRC
tRAS
tRP
tRC
tRP
tRAS
tC R P
tRCD
tRSH
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tRAL
tCAH
COLUMN
ADDRESS
tR C S
tCHR
tWRH
tA A
tOEA
OPEN
tCLZ
tRAC
tOLZ
tCAC
tR E Z
tW E Z
tOEZ
DATA-OUT
tCEZ
Don′t care
Undefined
* In Hidden refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off.