CIG22H2R2MNE Datasheet, PDF (5/6 Pages) Samsung semiconductor – Power Inductor; CIG Series

CIG 2520(1008) Type - High Current
Part No.
CIG22H1R0MNE
CIG22H2R2MNE
CIG22H3R3MNE
CIG22H4R7MNE
Inductance ( H)
@1MHz
1.0 20 %
2.2 20 %
3.3 20 %
4.7 20 %
INDUCTANCE
10
4R7
3R3
2R2
1R0
1
DC Resistance (
0.083 20 %
0.116 20 %
0.133 20 %
0.233 20 %
Rated Current. Idc (A)
Typ. T = 40
2.0
1.6
1.5
1.0
DC BIAS CHARACTERISTIC
10
4R7
3R3
1
2R2
1R0
0.1
1
10
100
Frequency (MHz)
1000
0
10
100
1000
Current (mA)
10000
CIG 2520(1008) Type - High Current and Low Profile
Part No.
CIG22B1R0MNE
CIG22B2R2MNE
CIG22B3R3MNE
CIG22B4R7MNE
Inductance ( H)
@1MHz
1.0 20 %
2.2 20 %
3.3 20 %
4.7 20 %
DC Resistance (
0.12 20 %
0.18 20 %
0.21 20 %
0.25 20 %
Rated Current. Idc (A)
T = 40
1.2
1.1
1.05
1.0
100
10
1
0.1
1
INDUCTANCE
4R7 _3R3
2R2
1R0
10
100
Frequency (MHz)
1000
DC BIAS CHARACTERISTIC
10
1
0
10
4R7
3R3
2R2
1R0
100
1000
Current (mA)
10000