CIG22H2R2MNE Datasheet, PDF (1/6 Pages) Samsung semiconductor – Power Inductor; CIG Series

Power Inductor; CIG Series
DC-DC converter Type
General Features
Low profile (1.0mm max height)
Magnetically shielded and Low DC resistance
Lead free termination and internal electrode
Monolithic structure for high reliability
Application
Mobile phones, DSC, DVC, PDA etc. for DC- DC Converter
Dimensions
Ferrite Body
External Electrode
d
t
SIZE CODE
CIG10F Series
CIG10W Series
CIG21F Series
CIG21W Series
CIG21L Series
CIG21C Series
CIG22L Series
CIG22H Series
CIG22B Series
L
1.6 0.15
1.6 0.15
2.0 0.1
2.0 0.2
2.0 0.1
2.0 0.1
2.5 0.2
2.5 0.2
2.5 0.2
W
L
Dimension (mm)
W
t
0.8 0.15
0.8 0.15
1.25 0.1
1.25 0.2
1.25 0.1
1.25 0.1
2.0 0.2
2.0 0.2
2.0 0.2
0.5 max
0.8 max
0.5 max
1.0 max
1.0 max
1.0 max
1.0 max
1.2 max
1.0 max
Part Numbering
CI G 22
L 4R7 M
NE
(1) (2) (3) (4)
(5)
(6) (7) (8)
(1) Chip inductor
(2) Power inductor
(3) Dimensions (10:1608, 21:2012, 22:2520)
(4) Product Series (W: Normal Type, L: Low Rdc Type, F: Low profile Type,
H: High Current Type, B: High Current & Low Profile Type)
(5) Inductance (R47: 0.47uH, 2R2: 2.2uH, 4R7: 4.7uH)
(6) Tolerance (M: 20%)
(7) Thickness Option (N: Standard, A: Thinner than standard, B: Thicker than standard)
(8) Package Style (C: Paper tape / 7”reel, E: Embossed tape / 7”reel)
d
0.1~0.5
0.1~0.5
0.2~0.7
0.2~0.7
0.2~0.7
0.2~0.7
0.3~0.8
0.3~0.8
0.3~0.8