K4R881869I-DC Datasheet, PDF (4/4 Pages) Samsung semiconductor – Direct RDRAM Product Guide

General Information
B. Direct RDRAM Component Ordering Information
Direct RDRAM^™
12 3
4
5
6 78
9 10
11
K4 RXXXXXXX-XXXX
SAMSUNG Memory
DRAM
Product
Density & Refresh
Organization
Speed
Temperature & Power
Package Type
Revision
Interface (VDD, VDDQ)
Bank
1. SAMSUNG Memory : K
2. DRAM : 4
3. Product
R : RDRAM^
4. Density & Refresh
27 : 128M, 16K/32ms(1.95us)
44 : 144M, 16K/32ms(1.95us)
57 : 256M, 16K/32ms(1.95us)
88 : 288M, 16K/32ms(1.95us)
52 : 512M, 32K/32ms(0.98us)
76 : 576M, 32K/32ms(0.98us)
5. Organization
16 : x16
18 : x18
6. Bank
6 : 32 Banks
7. Interface ( VDD, VDDQ)
9 : RSL (2.5V)
8. Revision
M : 1st Gen.
A : 2nd Gen.
B : 3rd Gen.
C : 4th Gen.
D : 5th Gen.
E : 6th Gen.
F : 7th Gen.
H : 9th Gen.
I : 10th Gen.
9. Package Type
M :* uBGA^“ package for Mirrored Package
N :* uBGA^“ package for Normal Package
S :* uBGA^“ package for Consumer Package
F : WBGA
G : WBGA lead free
H : WBGA lead free for SO-RIMM Module
T : Consumer WBGA(54ball) & Lead free
R : Consumer WBGA(54ball)
D : FBGA & Lead free
10. Temperature & Power
C : Commercial, Normal
L : Commercial, Low
I : Industrial, Normal
11. Speed (t_CYCLE. t_RAC, t_RC)
DS : for Daisy chain Sample
N1 : 600MHz (1.667 ns), - 32, 32clks, for Long channel
T9 : 533MHz (1.875 ns), - 32P, 28clks, for Long channel
N9 : 533MHz (1.875 ns), - 32, 28clks, for Long channel
M9 : 533MHz (1.875 ns), - 35, 32clks, for Long channel
S9 : 533MHz (1.875 ns), - 35, 32clks, for Short channel
M8 : 400MHz (2.5 ns), - 40, 28clks, for Long channel
K8 : 400MHz (2.5 ns), - 45, 28clks, for Long channel
S8 : 400MHz (2.5 ns), - 45, 28clks, for Short channel
K7 : 356MHz (2.81 ns), - 45, 28clks, for Long channel
G6 : 300MHz (3.33 ns), - 53.3, 28clks, for Long channel
S6 : 300MHz (3.33 ns), - 53.3, 28clks, for Short channel
* uBGA and micro BGA are registered trademarks of Tessera, Inc.