K4R881869I-DC Datasheet, PDF (3/4 Pages) Samsung semiconductor – Direct RDRAM Product Guide

General Information
Direct RDRAM^™
A. Direct RDRAM Component Product Guide
Density
Org.^*1
288Mb(I-die) 512Kx18*32s
Part Number
K4R881869I-DC
Speed^*3
T9
Power(V) Refresh
2.5±0.13V 16K/32ms
Package
Type^*2
92ball FBGA
Availability
Now
*1 _{Bank description}
- 32s :32 banks with a “spilt” architecture
*2 _{Package Type}
Code
Description
F WBGA
G WBGA, Lead free
H WBGA, Lead free for SO-RIMM module
T 54ball WBGA, Lead free
R 54ball WBGA
D FBGA, Lead free
*3 _{Speed (Freq. & tRAC)}
Data
frequency
Application
1200Mbps Long channel
Long channel
1066Mbps
Short channel
Long channel
800Mbps
Short channel
Code
Description
(t_CYCLE. t_RAC, t_RC)
N1 600MHz(1.667ns), -32, 32clks
T9 533MHz (1.875ns), -32P, 28clks
N9 533MHz (1.875ns), -32, 28clks
M9 533MHz (1.875ns), -35, 32clks
S9 533MHz (1.875ns), -35, 32clks
M8 400MHz (2.5ns), -40, 28clks
K8 400MHz (2.5ns), -45, 28clks
S8 400MHz (2.5ns), -45, 28clks