S3C44B0X Datasheet, PDF (393/424 Pages) Samsung semiconductor – RISC MICROPROCESSOR

S3C44B0X RISC MICROPROCESSOR
ELECTRICAL DATA
EXTCLK
ADDR
nRASx
nCASx
nOE
DATA
tDAD
tDAD
tDAD
tDRD
tDRD
Trcd
tDRCD
tDRCD
Trp
tDOD
Tcas Tcp
tDOD
tDDS
tDDH
Figure 19-21. DRAM(EDO) Single READ Timing (Trcd=3, Tcas=2, Tcp=1, Trp=4.5, MT=10b)
EXTCLK
ADDR
nRASx
nCASx
nOE/nWE
tDRD
Trp
tDCCD
Tchr
'1'
tDRD
tDCCD
Figure 19-22. DRAM CBR Refresh Timing (Tchr=4)
19-17