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K9F5608UOC Datasheet, PDF (38/41 Pages) Samsung semiconductor – 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608Q0C K9F5616Q0C
K9F5608D0C K9F5616D0C
K9F5608U0C K9F5616U0C
FLASH MEMORY
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. LOCKPRE pin controls activation of
auto- page read function. Auto-page read function is enabled only when LOCKPRE pin is logic high state. Serial access may be done
after power-on without latency. Power-On Auto Read mode is available only on 3.3V device(K9F56XXU0C).
Figure 16. Power-On Auto-Read (3.3V device only)
VCC
CLE
CE
WE
ALE
LOCKPRE
R/B
RE
I/OX
~ 1.8V
tR
1st
2nd
3rd
.... n th
38