K9F5608UOC Datasheet, PDF (19/41 Pages) Samsung semiconductor – 32M x 8 Bit 16M x 16 Bit NAND Flash Memory

K9F5608Q0C K9F5616Q0C
K9F5608D0C K9F5616D0C
K9F5608U0C K9F5616U0C
FLASH MEMORY
Pointer Operation of K9F5616X0C(X16)
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’command
sets the pointer to ’A’area(0~255word), and ’50h’command sets the pointer to ’B’area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’or ’50h’is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’or ’B’area, ’00h’or ’50h’command must be inputted before ’80h’command is
written. A complete read operation prior to ’80h’command is not necessary.
Table 3. Destination of the pointer
Command
00h
50h
Pointer position
0 ~ 255 word
256 ~ 263 word
Area
main array(A)
spare array(B)
"A" area
(00h plane)
256 Word
"B" area
(50h plane)
8 Word
"A"
"B"
Internal
Page Register
Pointer select
command
(00h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
(1) Command input sequence for programming ’A’area
The address pointer is set to ’A’area(0~255), and sustained
Address / Data input
00h
80h
10h
00h
Address / Data input
80h
10h
’A’,’B’area can be programmed.
It depends on how many data are inputted.
’00h’command can be omitted.
(2) Command input sequence for programming ’B’area
The address pointer is set to ’B’area(256~263), and sustained
Address / Data input
50h
80h
10h
50h
Address / Data input
80h
10h
Only ’B’area can be programmed.
’50h’command can be omitted.
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