K91G08Q0M Datasheet, PDF (38/40 Pages) Samsung semiconductor – 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 16). Its value can be
determined by the following guidance.
VCC
GND
Rp _ibusy
R/B
open drain output
C_L
Ready Vcc
1.8V device - VOL : 0.1V, VOH : VCCq-0.1V
2.65V device - VOL : 0.4V, VOH : Vccq-0.4V
3.3V device - VOL : 0.4V, VOH : 2.4V
VOH
VOL
Busy
tf
tr
Device
Figure 16. Rp vs tr ,tf & Rp vs ibusy
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