K91G08Q0M Datasheet, PDF (10/40 Pages) Samsung semiconductor – 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Symbol
Unit
1.8V DEVICE
3.3V/2.65V DEVICE
Voltage on any pin relative to VSS
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
VCC
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under
Bias
K9F1GXXX0M-XCB0
K9F1GXXX0M-XIB0
TBIAS
-10 to +125
°C
-40 to +125
K9F1GXXX0M-XCB0
Storage Temperature
K9F1GXXX0M-XIB0
TSTG
-65 to +150
°C
Short Circuit Current
Ios
5
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1GXXX0M-XCB0 :TA=0 to 70°C, K9F1GXXX0M-XIB0:TA=-40 to 85°C)
Parameter
K9F1GXXQ0M(1.8V)
K9F1GXXD0M(2.65V)
K9F1GXXU0M(3.3V)
Symbol
Unit
Min Typ. Max Min Typ. Max Min Typ. Max
Supply Voltage
VCC
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
0
0
0
V
10