K9K1G08U0M-YCB0 Datasheet, PDF (35/37 Pages) Samsung semiconductor – 128M x 8 Bit NAND Flash Memory

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operatio n. The pin
is an open-drain driver thereby allowing two or more R/ B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B)
and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 24). Its value can
be determined by the following guidance.
Rp _ibusy
VCC
R/B
open drain output
Ready Vcc
0.8V
Busy
GND
Device
tf
300n
200n
100n
Fig 24 Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 3.3V, Ta = 25°C , C_L = 100pF
3.3
381
Ibusy
1.65
290
189
tr
96
4.2 _tf
4.2
1.1
0.825
4.2
4.2
Rp value guidance
1K
2K
3K
4K
Rp(ohm)
VCC(Max.) - VOL(Max.)
Rp(min) =
=
IOL + ΣIL
3.2V
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
2.0V
tr
3m
2m
1m
35