K9K1G08U0M-YCB0 Datasheet, PDF (1/37 Pages) Samsung semiconductor – 128M x 8 Bit NAND Flash Memory

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0
Document Title
128M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No History
0.0
1. Initial issue
0.1
1.[Page 31] device code (76h) --> device code (79h)
0.2
1.Powerup sequence is added
: Recovery time of minimum 1µs is required before internal circuit gets
ready for any command sequences
Draft Date Remark
Apr. 7th 2001
Jul. 3rd 2001
Jul. 23th 2001
2.5V
2.5V
VCC
High
WP
WE
1µ
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3. [Page28] Only address A 14 to A25 is valid while A9 to A13 is ignored
--> Only address A14 to A26 is valid while A 9 to A13 is ignored
0.3
(page 30)
A14 and A15 must be the same between source and target page
Sep. 13th 2001
--> A14 , A15 and A26 must be the same between source and target page
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1