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K6R1008V1B Datasheet, PDF (3/9 Pages) Samsung semiconductor – 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
PRPErLeIMlimINinAaRrYy
CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Symbol
VIN, VOUT
VCC
PD
TSTG
TA
TA
Rating
-0.5 to 4.6
-0.5 to 4.6
1.0
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
Min
Typ
VCC
3.0
3.3
VSS
0
0
VIH
2.0
-
VIL
-0.3**
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width ≤ 6ns) for I ≤ 20mA.
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 6ns) for I ≤ 20mA.
Max
3.6
0
VCC+0.3***
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Symbol
ILI
ILO
ICC
Test Conditions
VIN = VSS to VCC
CS=VIH or OE=VIH or WE=VIL
VOUT = VSS to VCC
Min. Cycle, 100% Duty
CS=VIL, VIN = VIH or VIL,
IOUT=0mA
ISB
Min. Cycle, CS=VIH
ISB1
f=0MHz, CS ≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
VOL
VOH
IOL=8mA
IOH=-4mA
Min
-2
-2
8ns
-
10ns
-
12ns
-
-
Normal
-
L-Ver.
-
-
2.4
Max
2
2
160
155
150
50
5
0.7
0.4
-
Unit
µA
µA
mA
mA
mA
V
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
CI/O
CIN
* Capacitance is sampled and not 100% tested.
Test Conditions
MIN
VI/O=0V
-
VIN=0V
-
-3-
Max
Unit
8
pF
6
pF
Rev 2.1
August 1998