English
Language : 

K6R1008V1B Datasheet, PDF (1/9 Pages) Samsung semiconductor – 128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges
K6R1008V1B-C/B-L, K6R1008V1B-I/B-P
PRPErLeIMlimINinAaRrYy
CMOS SRAM
Document Title
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No.
History
Rev. 0.0
Initial release with Design Target.
Rev.1.0
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Rev.2.0
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete 32-SOJ-300 package.
2.3. Add Capacitive load of the test environment in A.C test load.
2.4. Change D.C characteristics.
Items
Previous spec.
(8/10/12ns part)
Changed spec.
(8/10/12ns part)
ICC
160/150/140mA
160/155/150mA
ISB
30mA
50mA
Rev. 2.1
Change Standby and Data Retention Current for L-ver.
Items
Previous spec.
Changed spec.
ISB1
0.5mA
0.7mA
IDR at 3.0V
0.4mA
0.5mA
IDR at 2.0V
0.3mA
0.4mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Remark
Design Target
Preliminary
Feb. 25th, 1998 Final
Aug. 4th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev 2.1
-1-
August 1998