K6E1004C1B Datasheet, PDF (3/9 Pages) Samsung semiconductor – 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out

PRELIMINARY
K6E1004C1B-C/B-L
CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
Storage Temperature
Operating Temperature
Symbol
VIN, VOUT
VCC
PD
TSTG
TA
Rating
-0.5 to 7.0
-0.5 to 7.0
1.0
-65 to 150
0 to 70
Unit
V
V
W
°C
°C
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
4.5
VSS
0
VIH
2.2
VIL
-0.5*
5.0
5.5
V
0
0
V
-
VCC+0.5**
V
-
0.8
V
* VIL(Min) = -2.0V a.c(Pulse Width ≤ 10ns) for I ≤ 20mA .
** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤10ns) for I ≤ 20mA
DC AND OPERATING CHARACTERISTICS (TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
Output Leakage Current
ILI
VIN=VSS to VCC
ILO
CS=VIH or OE=VIH or WE=VIL
VOUT=VSS to VCC
-2
2
µA
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty
15ns
-
CS=VIL, VIN=VIH or VIL, IOUT=0mA
20ns
-
120
mA
118
Standby Current
ISB
Min. Cycle, CS=VIH
-
20
mA
ISB1
f=0MHz, CS≥VCC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
Normal
-
L-ver
-
5
mA
1
mA
Output Low Voltage Level
VOL
IOL=8mA
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Symbol
Test Conditions
MIN
Input/Output Capacitance
Input Capacitance
CI/O
VI/O=0V
-
CIN
VIN=0V
-
* Capacitance is sampled and not 100% tested.
-3-
Max
8
6
Unit
pF
pF
Rev. 3.0
July 1998