K6E1004C1B Datasheet, PDF (1/9 Pages) Samsung semiconductor – 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out

PRELIMINARY
K6E1004C1B-C/B-L
CMOS SRAM
Document Title
256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out.
Revision History
Rev. No.
Rev. 0.0
Rev.1.0
Rev. 2.0
Rev.3.0
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete 17ns, L-version and Industrial Temperature Part.
2.3. Delete VOH1=3.95V.
2.4. Delete Data Retention Characteristics and Wave form.
2.5. Relex operating current.
Speed
Previous
Now
15ns
120mA
120mA
17ns
110mA
-
20ns
100mA
118mA
3.1. Add Low power Version.
3.2. Add Data Retention chcracteristics.
Draft Data
Feb. 1st 1997
Jun. 1st 1997
Remark
Design Target
Preliminary
Feb. 6th 1998 Final
Jul. 28th 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev. 3.0
July 1998