DS_K6F8016U6C Datasheet, PDF (3/9 Pages) Samsung semiconductor – 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6C Family
Preliminary
CMOS SRAM
PRODUCT LIST
Part Name
K6F8016U6C-FF55
K6F8016U6C-FF70
Industrial Temperature Products(-40~85°C)
Function
48-FBGA, 55ns, 3.0V
48-FBGA, 70ns, 3.0V
FUNCTIONAL DESCRIPTION
CS1
CS2
OE
WE
LB
H
X¹⁾
X¹⁾
X¹⁾
X¹⁾
X¹⁾
L
X¹⁾
X¹⁾
X¹⁾
X¹⁾
X¹⁾
X¹⁾
X¹⁾
H
L
H
H
H
L
L
H
H
H
X¹⁾
L
H
L
H
L
L
H
L
H
H
L
H
L
H
L
L
H
X¹⁾
L
L
L
H
X¹⁾
L
H
L
H
X¹⁾
L
L
1. X means don′t care. (Must be low or high state)
UB
I/O1~8 I/O9~16
Mode
X¹⁾
High-Z High-Z
Deselected
X¹⁾
High-Z High-Z
Deselected
H
High-Z High-Z
Deselected
X¹⁾
High-Z High-Z
Output Disabled
L
High-Z High-Z
Output Disabled
H
Dout High-Z
Lower Byte Read
L
High-Z Dout
Upper Byte Read
L
Dout
Dout
Word Read
H
Din
High-Z
Lower Byte Write
L
High-Z Din
Upper Byte Write
L
Din
Din
Word Write
Power
Standby
Standby
Standby
Active
Active
Active
Active
Active
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS¹⁾
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
VIN, VOUT
VCC
PD
TSTG
TA
Ratings
Unit
-0.5 to VCC+0.3V(Max. 3.6V)
V
-0.3 to 3.6
V
1.0
W
-65 to 150
°C
-40 to 85
°C
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions over 1 second may affect reliability.
3
Revision 0.0
May 2003