K8S5615ETC Datasheet, PDF (28/65 Pages) Samsung semiconductor – 256Mb C-die NOR Flash

K8S5615ETC
Rev. 1.0
datasheet ^{NOR FLASH MEMORY}
15.0 DC CHARACTERISTICS
Parameter
Input Leakage Current
VPP Leakage Current
Output Leakage Current
Active Burst Read Current
Active Asynchronous
Read Current
Active Write Current ²⁾
Read While Write Current
Accelerated Program Current
Standby Current
Standby Current During Reset
Automatic Sleep Mode ³⁾
Deep Power Down Mode
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Voltage for Accelerated Program
Low VCC Lock-out Voltage
Vpp current in program/erase
Symbol
ILI
ILIP
ILO
ICCB1
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
ICC8
VIL
VIH
VOL
VOH
VID
VLKO
Ivpp
Test Conditions
VIN=VSS to VCC, VCC=VCCmax
VCC=VCCmax , VPP=VCCmax
VCC=VCCmax , VPP=9.5V
VOUT=VSS to VCC, VCC=VCCmax, OE=VIH
CE=VIL, OE=VIH (@133MHz)
Min
Typ
Max
Unit
- 1.0
-
+ 1.0
μA
- 1.0
-
+ 1.0
μA
-
-
35
μA
- 1.0
-
+ 1.0
μA
-
35
55
mA
CE=VIL, OE=VIH
10MHz
-
35
55
mA
CE=VIL, OE=VIH, WE=VIL, VPP=VIH
CE=VIL, OE=VIH
CE=VIL, OE=VIH , VPP=9.5V
CE= RESET=VCC ± 0.2V
RESET = VSS ± 0.2V
CE=VSS ± 0.2V, Other Pins=VIL or VIH
VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
IOL = 100 μA , VCC=VCCmin
IOH = -100 μA , VCC=VCCmin
Vpp = 9.5V
Vpp = 1.95V
-
25
40
mA
-
45
70
mA
-
20
30
mA
-
30
120
μA
-
30
120
μA
-
30
120
μA
-
2
30
μA
-0.5
-
0.4
V
VCC-0.4
-
VCC+0.4
V
-
-
0.1
V
VCC-0.1
-
-
V
8.5
9.0
9.5
V
-
-
1.4
V
-
0.8
5
mA
-
-
50
μA
NOTE :
1) Maximum ICC specifications are tested with VCC = VCCmax.
2) ICC active while Internal Erase or Internal Program is in progress.
3) Device enters automatic sleep mode when addresses are stable for tAA + 60ns.
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