K4H510438 Datasheet, PDF (23/24 Pages) Samsung semiconductor – 512Mb B-die DDR SDRAM Specification

DDR SDRAM 512Mb B-die (x4, x8, x16)
90
80
70
60
50
40
30
20
10
0
0.0
1.0
2.0
Pullup Characteristics for Weak Output Driver
DDR SDRAM
Maximum
Typical High
Typical Low
Minimum
Vout(V)
0.0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
1.0
2.0
Minumum
Typical Low
Typical High
Maximum
Pulldown Characteristics for Weak Output Driver
Vout(V)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Rev. 1.3 June. 2005