K4H510438 Datasheet, PDF (15/24 Pages) Samsung semiconductor – 512Mb B-die DDR SDRAM Specification

DDR SDRAM 512Mb B-die (x4, x8, x16)
DDR SDRAM
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Parameter
DDR400
Specification
DDR333 DDR200/266
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
TBD
TBD
TBD
TBD
TBD
TBD
1.2 V
1.2 V
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
TBD
2.4 V-ns
VDDQ
Overshoot
5
4
Maximum Amplitude = 1.2V
3
2
Area = 2.4V-ns
1
0
-1
-2
Maximum Amplitude = 1.2V
-3
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
Rev. 1.3 June. 2005