K4H560838E Datasheet, PDF (22/24 Pages) Samsung semiconductor – DDR SDRAM 256Mb E-die (x4, x8)

DDR SDRAM 256Mb E-die (x4, x8)
DDR SDRAM
Voltage
(V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
Typical
Low
6.0
12.2
18.1
24.1
29.8
34.6
39.4
43.7
47.5
51.3
54.1
56.2
57.9
59.3
60.1
60.5
61.0
61.5
62.0
62.5
62.9
63.3
63.8
64.1
64.6
64.8
65.0
Pulldown Current (mA)
Typical
High
6.8
13.5
20.1
26.6
33.0
39.1
44.2
49.8
55.2
60.3
65.2
69.9
74.2
78.4
82.3
85.9
89.1
92.2
95.3
97.2
99.1
100.9
101.9
102.8
103.8
104.6
105.4
Minimum
4.6
9.2
13.8
18.4
23.0
27.7
32.2
36.8
39.6
42.6
44.8
46.2
47.1
47.4
47.7
48.0
48.4
48.9
49.1
49.4
49.6
49.8
49.9
50.0
50.2
50.4
50.5
Maximum
9.6
18.2
26.0
33.9
41.8
49.4
56.8
63.2
69.9
76.3
82.5
88.3
93.8
99.1
103.8
108.4
112.1
115.9
119.6
123.3
126.5
129.5
132.4
135.0
137.3
139.2
140.8
Typical
Low
-6.1
-12.2
-18.1
-24.0
-29.8
-34.3
-38.1
-41.1
-41.8
-46.0
-47.8
-49.2
-50.0
-50.5
-50.7
-51.0
-51.1
-51.3
-51.5
-51.6
-51.8
-52.0
-52.2
-52.3
-52.5
-52.7
-52.8
pullup Current (mA)
Typical
High
-7.6
-14.5
-21.2
-27.7
-34.1
-40.5
-46.9
-53.1
-59.4
-65.5
-71.6
-77.6
-83.6
-89.7
-95.5
-101.3
-107.1
-112.4
-118.7
-124.0
-129.3
-134.6
-139.9
-145.2
-150.5
-155.3
-160.1
Minimum
-4.6
-9.2
-13.8
-18.4
-23.0
-27.7
-32.2
-36.0
-38.2
-38.7
-39.0
-39.2
-39.4
-39.6
-39.9
-40.1
-40.2
-40.3
-40.4
-40.5
-40.6
-40.7
-40.8
-40.9
-41.0
-41.1
-41.2
Maximum
-10.0
-20.0
-29.8
-38.8
-46.8
-54.4
-61.8
-69.5
-77.3
-85.2
-93.0
-100.6
-108.1
-115.5
-123.0
-130.4
-136.7
-144.2
-150.5
-156.9
-163.2
-169.6
-176.0
-181.3
-187.6
-192.9
-198.2
Table 8. Full Strength Driver Characteristics
Rev. 1.3 April. 2005