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| K9L8G08U1A Datasheet, PDF (21/44 Pages) Samsung semiconductor – 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory | |||
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K9L8G08U1A
K9G4G08U0A K9G4G08B0A
Preliminary
FLASH MEMORY
Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L)
CE
RE
I/Ox
R/B
tRC
tRP
tREH
tREA
tCEA
tRR
tREA
tRLOH(2)
Dout
tCHZ(1)
tCOH
tRHZ(1)
tRHOH(2)
Dout
NOTES : 1. Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
2. tRLOH is valid when frequency is higher than 20MHz.
tRHOH starts to be valid when frequency is lower than 20MHz.
Status Read Cycle
CLE
CE
WE
RE
I/Ox
tCLS
tCS
tCLH
tCLR
tCH
tWP
tWHR
tCEA
tCHZ
tCOH
tDS tDH
70h/F1h
tIR
tREA
tRHZ
tRHOH
Status Output
21
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