K4T51043QI Datasheet, PDF (2/14 Pages) Samsung semiconductor – DDR2 SDRAM Memory

Product Guide
Apr. 2010
DDR2 SDRAM Memory
1. DDR2 SDRAM MEMORY ORDERING INFORMATION
12 3
4
5
6 78
9 10
11
K4 TXXXXXXX-XXXX
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
Speed
Temp & Power
Package Type
Revision
Interface (VDD, VDDQ)
# of Internal Banks
1. SAMSUNG Memory : K
2. DRAM : 4
3. DRAM Type
T : DDR2 SDRAM
4. Density
56 : 256Mb
51 : 512Mb
1G : 1Gb
2G : 2Gb
4G : 4Gb
5. Bit Organization
04 : x 4
06 : x 4 Stack
07 : x 8 Stack
08 : x 8
16 : x16
26 : x 4 Stack (JEDEC Standard)
27 : x 8 Stack (JEDEC Standard)
6. # of Internal Banks
3 : 4 Banks
4 : 8 Banks
7. Interface ( VDD, VDDQ)
Q : SSTL_18 (1.8V, 1.8V)
8. Revision
M : 1st Gen.
A : 2nd Gen.
B : 3rd Gen.
C : 4th Gen.
D : 5th Gen.
E : 6th Gen.
F : 7th Gen.
G : 8th Gen.
H : 9th Gen.
I : 10th Gen.
Q : 17th Gen.
R : 18th Gen.
9. Package Type
Z : FBGA (Lead-free)
J : FBGA DDP (Lead-free)
H : FBGA (Lead-free & Halogen-free)
M : FBGA DDP (Lead-free & Halogen-free)
T : FBGA DSP (Lead-free & Halogen-free, Thin)
B : FBGA (Lead-free & Halogen-free, Flip Chip)
10. Temp & Power
C : Commercial Temp.( 0°C ~ 95°C) & Normal Power
L : Commercial Temp.( 0°C ~ 95°C) & Low Power
Y : Commercial Temp.( 0°C ~ 95°C) & Low Voltage
11. Speed
CC : DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3)
D5 : DDR2-533 (266MHz @ CL=4, tRCD=4, tRP=4)
E6 : DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5)
F7 : DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6)
E7 : DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)
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