K4S280432F Datasheet, PDF (2/14 Pages) Samsung semiconductor – 128Mb F-die SDRAM Specification

SDRAM 128Mb F-die (x4, x8, x16)
Revision History
Revision 0.0 (Agust, 2003)
- First release.
Revision 0.1 (November, 2003)
- completed DC characteristics.
Revision 0.2 (November, 2003)
- Preliminary spec release.
Revision 1.0 (January, 2004)
- Revision 1.0 spec release.
- Modified ICC4 current from 110mA -> 140mA at x16
- Modified tSH from 0.8ns -> 1.0ns at 166MHz.
Revision 1.1 (February, 2004)
- Corrected typo.
Revision 1.2 (May, 2004)
• Added Note 5. sentense of tRDL parameter
CMOS SDRAM
Rev. 1.2 May 2004