K4E660812C Datasheet, PDF (2/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812C,K4E640812C
CMOS DRAM
PIN CONFIGURATION (Top Views)
• K4E660812C-J
• K4E640812C-J
VCC 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
N.C 6
VCC 7
W8
RAS 9
A0 10
A1 11
A2 12
A3 13
A4 14
A5 15
VCC 16
32 VSS
31 DQ7
30 DQ6
29 DQ5
28 DQ4
27 VSS
26 CAS
25 OE
24 A12(N.C)*
23 A11
22 A10
21 A9
20 A8
19 A7
18 A6
17 VSS
(J : 400mil SOJ)
• K4E660812C-T
• K4E640812C-T
VCC 1
DQ0 2
DQ1 3
DQ2 4
DQ3 5
N.C 6
VCC 7
W8
RAS 9
A0 10
A1 11
A2 12
A3 13
A4 14
A5 15
VCC 16
32 VSS
31 DQ7
30 DQ6
29 DQ5
28 DQ4
27 VSS
26 CAS
25 OE
24 A12(N.C)*
23 A11
22 A10
21 A9
20 A8
19 A7
18 A6
17 VSS
(T : 400mil TSOP(II))
* (N.C) : N.C for 4K Refresh product
Pin Name
A0 - A12
A0 - A11
DQ0 - 7
VSS
RAS
CAS
W
OE
VCC
N.C
Pin Function
Address Inputs(8K Product)
Address Inputs(4K Product)
Data In/Out
Ground
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Power(+3.3V)
No Connection