K4E660812C Datasheet, PDF (14/21 Pages) Samsung semiconductor – 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812C,K4E640812C
HYPER PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
tRASP
¡ó
tRP
tRHCP
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
tCRP
tASR
tRCD
tRAD
tRAH
tCSH
tASC
tHPC
tCAS
tCAH
ROW
ADDR.
COLUMN
ADDRESS
tHPC
tCP
tCP
tCAS
¡ó
tRSH
tCAS
tASC tCAH
tASC tCAH
¡ó
COLUMN
COLUMN
ADDRESS
ADDRESS
¡ó
tRAL
tWCS tWCH
tWCS
tWCH
tWCS tWCH
tWP
tWP
¡ó
tWP
tCWL
tCWL
¡ó
¡ó
tCWL
tRWL
DQ0 ~ DQ3(7)
VIH -
VIL -
tDS tDH
VALID
DATA-IN
tDS tDH
tDS tDH
¡ó
VALID
DATA-IN
¡ó
VALID
DATA-IN
Don′t care
Undefined