K4D26323QG Datasheet, PDF (2/18 Pages) Samsung semiconductor – 128Mbit GDDR SDRAM

K4D26323QG-GC
128M GDDR SDRAM
Revision History
Revision 1.2 (March 04, 2005)
• Removed K4D26323QG-GC22 from the datasheet
Revision 1.1 (November 26, 2004)
• Removed -GC20 from the spec.
• Changed AC spec format
• Changed DC spec measurement condition from VDD(typ) to VDD(max)
Revision 1.0 (June 23, 2004)
• Changed tDQSCK/tAC of -GC22/25 from 0.55tCK to 0.45tCK
• Changed tDQSCK/tAC of -GC20 from 0.55tCK to 0.35tCK
Revision 0.4 (June 04, 2004) - Preliminary
• Removed K4D26323QG-GC40 from the spec
• Changed VDD&VDDQ of -GC20/22 from 1.8V+0.1V to 2.0V+0.1V
• Changed AC characteristics table on page 15~ 16 from number of clock-based to ns-based. Also key parameters are
changed as below
- Changed tRFC/tWR_A/tDAL of -GC20 from 23tCK/6tCK to 25tCK/7tCK/14tCK
- Changed tRFC/tWR_A/tDAL of -GC22 from 22tCK/6tCK to 23tCK/7tCK/14tCK
- Changed tRC/tRFC/tRP/tWR_A/tDAL of -GC25 from 17tCK/19tCK/5tCK/5tCK/10tCK to 18tCK/20tCK/6tCK/6tCK/12tCK
- Changed tRC/tRFC/tRP/tRCD/tRP/tWR_A/tDAL of -GC2A from 15tCK/17tCK/5tCK/5tCK/10tCK to 16tCK/18tCK/6tCK/6tCK/12tCK
- Changed tRC/tRFC/tRAS/tRP/tWR_A/tDAL of -GC33 from 13tCK/15tCK/9tCK/4tCK/4tCK to 15tCK/17tCK/10tCK/5tCK/5tCK/10tCK
• Added DC target spec
Revision 0.3 (April 22, 2004)
• Changed tCK(max) of K4D26323QG-GC22 from 10ns to 5ns
• Changed tWR of K4D26323QG-GC20 from 6tCK to 7tCK
• Changed tWR of K4D26323QG-GC22 from 6tCK to 7tCK
• Changed tWR of K4D26323QG-GC25 from 5tCK to 6tCK
• Changed tWR of K4D26323QG-GC33 from 4tCK to 5tCK
• Changed tWR of K4D26323QG-GC40 from 3tCK to 4tCK
Revision 0.2 (April 20, 2004)
• Changed tCK(max) of K4D26323QG-GC20 from 10ns to 5ns
Revision 0.1 (April 16, 2004)
• Typo corrected
Revision 0.0 (February 2, 2004) - Target Spec
-2-
Rev 1.2(Mar. 2005)