K4D26323QG Datasheet, PDF (11/18 Pages) Samsung semiconductor – 128Mbit GDDR SDRAM

K4D26323QG-GC
128M GDDR SDRAM
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Parameter
Symbol
Test Condition
-25
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
260
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
10
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
65
Active Standby Current
power-down mode
ICC3P
CKE ≤ VIL(max), tCC= tCC(min)
65
Active Standby Current
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
210
Operating Current
( Burst Mode)
ICC4
IOL=0mA ,tCC= tCC(min),
Page Burst, All Banks activated.
475
Refresh Current
ICC5
tRC ≥ tRFC(min)
265
Self Refresh Current
ICC6
CKE ≤ 0.2V
Operating Current
(4Bank interleaving)
ICC7
Burst Length=4 tRC ≥ tRC(min)
570
IOL=0mA, tCC= tCC(min)
Note : 1. Measured with output open
2. Refresh period is 32ms
3. Current meassured at VDD(max)
Version
-2A
230
10
60
60
190
440
240
8
520
Unit Note
-33
220
mA
10
mA
50
mA
50
mA
170
mA
410
mA
225
mA 1
mA
460
mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 65°C)
Parameter
Input High (Logic 1) Voltage ;DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Symbol
Min
Typ
VIH
VREF+0.35
-
VIL
-
-
VID
0.7
-
Max
-
VREF-0.35
VDDQ+0.6
Unit
V
V
V
Note
1
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
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Rev 1.2(Mar. 2005)