K1S1616B1A Datasheet, PDF (2/10 Pages) Samsung semiconductor – 1Mx16 bit Uni-Transistor Random Access Memory

K1S1616B1A
Preliminary
UtRAM
1M x 16 bit Uni-Transistor CMOS RAM
FEATURES
• Process Technology: CMOS
• Organization: 1M x16 bit
• Power Supply Voltage: 1.7V~2.1V
• Three State Outputs
• Compatible with Low Power SRAM
• Dual Chip selection support
• Package Type: 48-FBGA-6.00x7.00
GENERAL DESCRIPTION
The K1S1616B1A is fabricated by SAMSUNG′s advanced
CMOS technology using one transistor memory cell. The device
supports Industrial temperature range and 48 ball Chip Scale
Package for user flexibility of system design. The device also
supports dual chip selection for user interface.
PRODUCT FAMILY
Product Family
Operating Temp.
K1S1616B1A-I
Industrial(-40~85°C)
Vcc Range
1.7V~2.1V
Speed
70/85ns
Power Dissipation
Standby Operating
(ISB1, Max.) (ICC2, Max.)
80µA
25mA
PKG Type
48-FBGA-6.00x7.00
PIN DESCRIPTION
1
2
3
4
5
6
A
LB
OE
A0
A1
A2 CS2
B
I/O9 UB
A3
A4 CS1 I/O1
C
I/O10 I/O11 A5
A6 I/O2 I/O3
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Vcc
Vss
Row
Addresses
Row
select
Memory array
D
Vss I/O12 A17 A7 I/O4 Vcc
E
Vcc I/O13 DNU A16 I/O5 Vss
F
I/O15 I/O14 A14 A15 I/O6 I/O7
G
I/O16 A19 A12 A13 WE I/O8
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
H
A18 A8
A9 A10 A11 DNU
CS1
48-FBGA: Top View(Ball Down)
CS2
OE
WE
UB
LB
Name
Function
CS1,CS2 Chip Select Inputs
OE Output Enable Input
WE Write Enable Input
A0~A19 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
1) Reserved for future use.
Name
Vcc
Vss
UB
LB
DNU
Function
Power
Ground
Upper Byte(I/O9~16)
Lower Byte(I/O1~8)
Do Not Use¹⁾
Control Logic
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
-2-
Revision 0.0
October 2003