K1S1616B1A Datasheet, PDF (10/10 Pages) Samsung semiconductor – 1Mx16 bit Uni-Transistor Random Access Memory

K1S1616B1A
PACKAGE DIMENSION
48 TAPE BALL GRID ARRAY(0.75mm ball pitch)
Top View
B
#A1
Preliminary
UtRAM
Unit: millimeters
Bottom View
B
B1
6 5 4 3 21
A
B
C
D
E
F
G
H
B/2
Side View
D
C
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
6.90
7.00
7.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
-
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.10
Detail A
A
Y
Notes.
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are ±0.050 unless
specified beside figures.
4. Typ : Typical
5. Y is coplanarity: 0.10(Max)
- 10 -
Revision 0.0
October 2003