CL05C101JB5NNNC Datasheet, PDF (2/2 Pages) Samsung semiconductor – CAP, 100㎊, 50V, ±5%, C0G, 0402

Vibration Test
Moisture
Resistance
High Temperature
Resistance
Temperature
Cycling
Performance
Test condition
Capacitance change :
Amplitude : 1.5mm
within ±2.5% or ±0.25㎊ whichever is larger From 10㎐ to 55㎐ (return : 1min.)
Tan δ, IR : initial spec.
2hours × 3 direction (x, y, z)
Capacitance change :
With rated voltage
within ±7.5% or ±0.75㎊ whichever is larger 40±2℃, 90~95%RH, 500+12/-0hrs
Q:
200 min
IR :
500Mohm or 25Mohm ⋅ ㎌
Whichever is Smaller
Capacitance change :
With 200% of the rated voltage
within ±3% or ±0.3㎊ whichever is larger Max. operating temperature
Q:
350 min
1000+48/-0hrs
IR :
1000Mohm or 50Mohm ⋅ ㎌
Whichever is Smaller
Capacitance change :
1 cycle condition
within ±2.5% or ±0.25㎊ whichever is larger Min. operating temperature→ 25℃
Tan δ, IR : initial spec.
→ Max. operating temperature → 25℃
5 cycle test
C. Recommended Soldering method :
Reflow ( Reflow Peak Temperature : 260+0/-5℃, 10sec. Max )
* For the more detail Specification, Please refer to the Samsung MLCC catalogue.