K9F2808U0A- Datasheet, PDF (19/26 Pages) Samsung semiconductor – 16M x 8 Bit NAND Flash Memory

K9F2808U0A-YCB0, K9F2808U0A-YIB0
BLOCK ERASE OPERATION(ERASE ONE BLOCK)
FLASH MEMORY
CLE
CE
tWC
WE
tWB
ALE
RE
I/O0~7
R/B
60h
A9 ~ A16 A17 ~ A23
DOh
Page(Row)
Address
Auto Block Erase
Setup Command
Erase Command
tBERS
Busy
70h
I/O 0
I/O0=0 Successful Erase
Read Status I/O0=1 Error in Erase
Command
MANUFACTURE & DEVICE ID READ OPERATION
CLE
CE
WE
ALE
RE
I/O 0 ~ 7
90h
Read ID Command
00h
Address. 1cycle
tREADID
ECh
Maker Code
73h
Device Code
19