K9F2808U0A- Datasheet, PDF (1/26 Pages) Samsung semiconductor – 16M x 8 Bit NAND Flash Memory

K9F2808U0A-YCB0, K9F2808U0A-YIB0
Document Title
16M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0
Initial issue.
Draft Date
April 10th 1999
0.1
1. Revised real-time map-out algorithm(refer to technical notes)
July 23th 1999
0.2
1. Changed device name
- KM29U128AT -> K9F2808U0A-YCB0
- KM29U128AIT -> K9F2808U0A-YIB0
Sep. 15th 1999
0.3
1. Changed sequential row read opera tion
Mar. 21th 2000
- The Sequential Read 1 and 2 operation is allowed only within a block
2. Changed invalid block(s) marking method prior to shipping
- The invalid block(s) information is written the 1st or 2nd page of the
invalid block(s) with 00h data
--->The invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has 00h data at the column address of 517.
0.4
1. Changed endurance : 1million -> 100K program/erase cycles
May 15th 2000
2. Changed invalid block(s) marking method prior to shipping
- The invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has 00h data at the column address of 517.
--->The invalid block(s) status is defined by the 6th byte in the spare
area. Samsung makes sure that either the 1st or 2nd page of every
invalid block has non-FFh data at the column address of 517.
0.5
1. Changed SE pin description
July 17th 2000
- SE is recommended to coupled to GND or Vcc and should not be
toggled during reading or programming.
0.6
1. Changed don’t care mode in address cycles
Nov. 20th 2000
- *X can be "High" or "Low" => *L must be set to "Low"
2. Explain how pointer operation works in detail.
3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)
- The SE input controls the access of the spare area. When SE is high,
the spare area is not accessible for reading or programming. SE is rec
ommended to be coupled to GND or Vcc and should not be toggled
during reading or programming.
=> Connect this input pin to GND or set to static low state unless the
sequential read mode excluding spare area is used.
4. Updated operation for tRST timing
- If reset command(FFh) is written at Ready state, the device goes into
Busy for maximum 5us.
Remark
Advanced
Information
Preliminary
Preliminary
Final
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1