K4X56163PG Datasheet, PDF (19/23 Pages) Samsung semiconductor – 16M x16 Mobile-DDR SDRAM

K4X56163PG - L(F)E/G
Mobile-DDR SDRAM
Functional Truth Table
Current State
PRECHARGE
STANDBY
ACTIVE
STANDBY
READ
CS RAS CAS WE
Address
Command
L
H
H
LX
Burst Stop
L
H
L
X BA, CA, A10
L
L
H
H BA, RA
READ/WRITE
Active
L
L
H
L BA, A10
PRE/PREA
L
L
L
HX
Refresh
L
L
L
L Op-Code, Mode-Add MRS
L
H
H
LX
Burst Stop
L
H
L
H BA, CA, A10
READ/READA
L
H
L
L BA, CA, A10
WRITE/WRITEA
L
L
H
H BA, RA
Active
L
L
H
L BA, A10
PRE/PREA
L
L
L
HX
Refresh
L
L
L
L Op-Code, Mode-Add MRS
L
H
H
LX
Burst Stop
L
H
L
H BA, CA, A10
READ/READA
L
H
L
L BA, CA, A10
WRITE/WRITEA
L
L
H
H BA, RA
Active
L
L
H
L BA, A10
PRE/PREA
L
L
L
HX
Refresh
L
L
L
L Op-Code, Mode-Add MRS
Action
ILLEGAL^*2
ILLEGAL^*2
Bank Active, Latch RA
ILLEGAL^*4
AUTO-Refresh^*5
Mode Register Set^*5
NOP
Begin Read, Latch CA,
Determine Auto-Precharge
Begin Write, Latch CA,
Determine Auto-Precharge
Bank Active/ILLEGAL^*2
Precharge/Precharge All
ILLEGAL
ILLEGAL
Terminate Burst
Terminate Burst, Latch CA,
Begin New Read, Determine
Auto-Precharge^*3
ILLEGAL
Bank Active/ILLEGAL^*2
Terminate Burst, Precharge
ILLEGAL
ILLEGAL
January 2006