K9F1G08Q0A Datasheet, PDF (17/37 Pages) Samsung semiconductor – FLASH MEMORY

K9F1G08Q0A
K9F1G08U0A
FLASH MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CLE
CE
CE don’t-care
WE
ALE
I/Ox
80h Address(4Cycles)
Data Input
Data Input
10h
tCS
tCH
tCEA
CE
CE
tWP
WE
RE
I/O0~7
tREA
out
Figure 5. Read Operation with CE don’t-care.
CLE
CE
RE
ALE
R/B
WE
I/Ox
tR
00h
Address(4Cycle)
30h
17
CE don’t-care
Data Output(serial access)