K9F1G08Q0A Datasheet, PDF (1/37 Pages) Samsung semiconductor – FLASH MEMORY

K9F1G08Q0A
K9F1G08U0A
Document Title
128M x 8 Bit NAND Flash Memory
Revision History
Revision No History
0.0
1. Initial issue
0.1
1. The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 23~26)
- tADL is the time from the WE rising edge of final address cycle
to the WE rising edge of first data cycle at program operation.
2. Added Addressing method for program operation
0.2
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
0.3
1. PKG(TSOP1, WSOP1) Dimension Change
FLASH MEMORY
Draft Date Remark
Aug. 24. 2003 Advance
Jan. 27. 2004 Preliminary
Apr. 23. 2004 Preliminary
May. 19. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1