K4H560438E-NC Datasheet, PDF (16/24 Pages) Samsung semiconductor – 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)

DDR SDRAM 256Mb E-die (x4, x8)
DDR SDRAM
Parameter
Mode register set cycle time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
Control & Address input pulse width
DQ & DM input pulse width
Power down exit time
Exit self refresh to non-Read command
Exit self refresh to read command
Refresh interval time
Output DQS valid window
Clock half period
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
Symbol
tMRD
tDS
tDH
tIPW
tDIPW
tPDEX
tXSNR
tXSRD
tREFI
tQH
tHP
tQHS
tWPST
B3
(DDR333@CL=2.5))
Min
Max
12
0.45
0.45
2.2
1.75
6
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.55
0.4
0.6
A2
(DDR266@CL=2.0)
Min
Max
15
0.5
0.5
2.2
1.75
7.5
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.75
0.4
0.6
tRAP
18
20
tDAL
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
B0
(DDR266@CL=2.5))
Min
Max
15
0.5
0.5
2.2
1.75
7.5
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.75
0.4
0.6
20
(tWR/tCK)
+
(tRP/tCK)
Unit Note
ns
ns
j, k
ns
j, k
ns
8
ns
8
ns
ns
tCK
us
4
ns
11
ns 10, 11
ns
11
tCK
2
tCK 13
Rev. 1.3 April, 2005