K4H511638C-Z Datasheet, PDF (16/24 Pages) Samsung semiconductor – 512Mb C-die DDR SDRAM Specification

DDR SDRAM 512Mb C-die (x4, x8, x16)
19.0 AC Timming Parameters & Specifications
Parameter
Symbol
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active delay
Write recovery time
Last data in to Read command
CL=2.0
Clock cycle time
CL=2.5
CL=3.0
Clock high level width
Clock low level width
DQS-out access time from CK/CK
Output data access time from CK/CK
Data strobe edge to ouput data edge
Read Preamble
Read Postamble
CK to valid DQS-in
DQS-in setup time
DQS-in hold time
DQS falling edge to CK rising-setup time
DQS falling edge from CK rising-hold time
DQS-in high level width
DQS-in low level width
Address and Control Input setup time(fast)
Address and Control Input hold time(fast)
Address and Control Input setup
tRC
tRFC
tRAS
tRCD
tRP
tRRD
tWR
tWTR
tCK
tCH
tCL
tDQSCK
tAC
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPRE
tDSS
tDSH
tDQSH
tDQSL
tIS
tIH
tIS
CC
(DDR400@CL=3.0)
Min
55
70
40
15
15
10
15
2
-
6
5
0.45
0.45
-0.55
-0.65
-
0.9
0.4
0.72
0
0.25
0.2
0.2
0.35
0.35
0.6
0.6
Max
70K
-
12
10
0.55
0.55
+0.55
+0.65
0.4
1.1
0.6
1.28
0.7
Address and Control Input hold time(slow)
Data-out high impedence time from CK/CK
Data-out low impedence time from CK/CK
Mode register set cycle time
DQ & DM setup time to DQS
tIH
tHZ
tLZ
tMRD
tDS
0.7
-0.65
-0.65
10
0.4
+0.65
+0.65
DQ & DM hold time to DQS
tDH
0.4
Control & Address input pulse width
tIPW
2.2
DQ & DM input pulse width
tDIPW
1.75
Exit self refresh to non-Read command
tXSNR
75
Exit self refresh to read command
tXSRD
200
Refresh interval time
Output DQS valid window
tREFI
7.8
tHP
tQH
-tQHS
-
Clock half period
tCLmin
tHP
or tCHmin
-
Data hold skew factor
tQHS
0.5
DQS write postamble time
tWPST
0.4
0.6
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
tRAP
tDAL
15
(tWR/tCK)
+
(tRP/tCK)
DDR SDRAM
B3
(DDR333@CL=2.5)
Min
Max
60
72
42
70K
18
18
12
15
1
7.5
12
6
12
-
-
0.45
0.55
0.45
0.55
-0.6
+0.6
-0.7
+0.7
-
0.45
0.9
1.1
0.4
0.6
0.75
1.25
0
0.25
0.2
0.2
0.35
0.35
0.75
0.75
0.8
0.8
-0.7
+0.7
-0.7
+0.7
12
0.45
0.45
2.2
1.75
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.55
0.4
0.6
18
(tWR/tCK)
+
(tRP/tCK)
Unit Note
ns
ns
ns
ns
ns
ns
ns
tCK
ns
ns
tCK
tCK
ns
ns
ns 22
tCK
tCK
tCK
ns 13
tCK
tCK
tCK
tCK
tCK
ns 15, 17~19
ns 15, 17~19
ns 16~19
ns 16~19
ns 11
ns 11
ns
ns j, k
ns _{j, k}
ns 18
ns 18
ns
tCK
us 14
ns 21
ns 20, 21
ns 21
tCK 12
tCK 23
Rev. 1.1 June. 2005