K4D26323RA Datasheet, PDF (16/18 Pages) Samsung semiconductor – 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

K4D26323RA-GC
* VDD / VDDQ=2.8V *
128M DDR SDRAM
AC CHARACTERISTICS (I)
Parameter
Sym-
bol
Row cycle time
tRC
Refresh row cycle time
tRFC
Row active time
tRAS
RAS to CAS delay for Read tRCDRD
RAS to CAS delay for Write tRCDWR
Row precharge time
tRP
Row active to Row active
tRRD
Last data in to Row precharge
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
Last data in to Read command
tWR
tWR_A
tCDLR
Col. address to Col. address tCCD
Mode register set cycle time tMRD
Auto precharge write recovery
+ Precharge
Exit self refresh to read com-
tDAL
tXSR
-2A
Min
Max
15
-
17
-
10
100K
5
-
3
5
-
4
-
3
-
3
-
2
-
1
-
2
-
8
-
200
-
-33
Min
Max
13
-
15
-
9
100K
4
-
2
4
-
3
-
2
-
3
-
2
-
1
-
2
-
7
-
200
-
-36
Min
16
18
11
5
3
5
3
3
3
2
1
2
8
200
Power down exit time
Refresh interval time
tPDEX 1tCK+tIS
-
1tCK+tIS
-
1tCK+tIS
tREF
7.8
-
7.8
-
7.8
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
Max
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK 1
tCK 1
tCK 1
tCK
tCK
tCK
tCK
ns
us
(Unit : Number of Clock)
AC CHARACTERISTICS (II)
K4D26323RA-GC2A
Frequency
Cas Latency tRC
350MHz ( 2.86ns )
4
15
300MHz ( 3.3ns )
4
13
275MHz ( 3.6ns )
4
16
tRFC
17
15
18
tRAS tRCDRD tRCDWR tRP
10
5
3
5
9
4
2
4
11
5
3
5
tRRD
4
3
3
tDAL Unit
8
tCK
7
tCK
8
tCK
K4D26323RA-GC33
Frequency
Cas Latency tRC
300MHz ( 3.3ns )
4
13
275MHz ( 3.6ns )
4
16
tRFC
15
18
tRAS tRCDRD tRCDWR tRP
9
4
2
4
11
5
3
5
tRRD
3
3
tDAL Unit
7
tCK
8
tCK
K4D26323RA-GC36
Frequency
Cas Latency tRC
275MHz ( 3.6ns )
4
16
tRFC
18
tRAS tRCDRD tRCDWR tRP
11
5
3
5
tRRD
3
tDAL Unit
8
tCK
- 16 -
Rev. 2.0 (Jan. 2003)