K4D26323RA Datasheet, PDF (12/18 Pages) Samsung semiconductor – 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL

K4D26323RA-GC
* VDD / VDDQ=2.8V *
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Parameter
Symbol
Test Condition
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
Active Standby Current
power-down mode
ICC3P CKE ≤ VIL(max), tCC= tCC(min)
Active Standby Current in
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
Operating Current
( Burst Mode)
ICC4
IOL=0mA ,tCC= tCC(min),
Page Burst, All Banks activated.
Refresh Current
ICC5
tRC ≥ tRFC(min)
Self Refresh Current
ICC6
CKE ≤ 0.2V
Operating Current
(4Bank interleaving)
ICC7
Burst Length=4 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
Note : 1. Measured with outputs open.
2. Refresh period is 32ms.
-2A
500
85
145
140
400
940
330
1200
128M DDR SDRAM
Version
-33
480
80
130
130
350
840
320
4
1080
-36
460
75
120
120
320
800
310
1000
Unit Note
mA 1
mA
mA
mA
mA
mA
mA 2
mA
mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD=2.8V+ 5%, VDDQ=2.8V+ 5%,TA=0 to 65°C)
Parameter
Symbol
Min
Typ
Max
Unit
Input High (Logic 1) Voltage; DQ
VIH
VREF+0.4
-
-
V
Input Low (Logic 0) Voltage; DQ
VIL
-
-
VREF-0.4
V
Clock Input Differential Voltage; CK and CK
VID
0.8
-
VDDQ+0.6
V
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
Note
1
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
- 12 -
Rev. 2.0 (Jan. 2003)