K4D261638F Datasheet, PDF (16/18 Pages) Samsung semiconductor – 128Mbit GDDR SDRAM

K4D261638F
128M GDDR SDRAM
AC CHARACTERISTICS (I - 2)
Parameter
Symbol
Row cycle time
tRC
Refresh row cycle time
tRFC
Row active time
tRAS
RAS to CAS delay for Read
tRCDRD
RAS to CAS delay for Write
tRCDWR
Row precharge time
tRP
Row active to Row active
tRRD
Last data in to Row
charge
precharge @Normal Pre-
tWR
Last data in to Row precharge @Auto Pre-
charge
tWR_A
Last data in to Read command
tCDLR
Col. address to Col. address
tCCD
Mode register set cycle time
tMRD
Auto precharge write recovery + Precharge tDAL
Exit self refresh to read command
tXSR
Power down exit time
tPDEX
Refresh interval time
tREF
-36
Min
Max
16
-
17
-
11
100K
4
-
2
-
5
-
3
-
4
-
4
-
2
-
1
-
2
-
9
-
200
-
3tCK
+tIS
-
7.8
-
-40
Min
Max
13
-
15
-
9
100K
4
-
2
-
4
-
3
-
3
-
3
-
2
-
1
-
2
-
7
-
200
-
3tCK
+tIS
-
7.8
-
-50
Min
Max
12
-
14
-
8
100K
4
-
2
-
4
-
3
-
3
-
3
-
2
-
1
-
2
-
7
-
200
-
3tCK
+tIS
-
7.8
-
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
Note
1
tCK
1
tCK
1
tCK
tCK
tCK
tCK
ns
us
AC CHARACTERISTICS (II - 2)
K4D261638F-TC36
Frequency
Cas Latency tRC
275MHz ( 3.6ns )
4
16
250MHz ( 4.0ns )
3
13
200MHz ( 5.0ns )
3
12
tRFC
17
15
14
tRAS tRCDRD tRCDWR tRP
11
4
2
5
9
4
2
4
8
4
2
4
(Unit : Number of Clock)
tRRD
3
3
3
tDAL Unit
9
tCK
7
tCK
7
tCK
K4D261638F-TC40
Frequency
Cas Latency tRC
250MHz ( 4.0ns )
3
13
200MHz ( 5.0ns )
3
12
tRFC
15
14
tRAS tRCDRD tRCDWR tRP
9
4
2
4
8
4
2
4
tRRD
3
3
tDAL Unit
7
tCK
7
tCK
K4D261638F-TC50
Frequency
Cas Latency tRC
200MHz ( 5.0ns )
3
12
tRFC
14
tRAS tRCDRD tRCDWR tRP
8
4
2
4
tRRD
3
tDAL Unit
7
tCK
- 16 -
Rev. 1.2 (Jan. 2004)