K4D261638F Datasheet, PDF (11/18 Pages) Samsung semiconductor – 128Mbit GDDR SDRAM

K4D261638F
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
128M GDDR SDRAM
Parameter
Symbol
Test Condition
Version
Unit Note
-25 -2A -33 -36 -40 -50
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
TBD 210 190 180 170 150 mA 1
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
TBD
60
45
mA
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
TBD
90
75
70
65
60 mA
Active Standby Current
power-down mode
ICC3P CKE ≤ VIL(max), tCC= tCC(min) TBD 75
65
60
55
50 mA
Active Standby Current in
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min)
TBD
135
100
100
95
90 mA
Operating Current
( Burst Mode)
ICC4
tRC ≥ tRFC(min)tRC ≥ tRFC(min)
TBD 400 290 275 260 245 mA
Page Burst, All Banks activated.
Refresh Current
ICC5
tRC ≥ tRFC(min)
TBD 245 210 200 195 190 mA 2
Self Refresh Current
ICC6
CKE ≤ 0.2V
4
mA
Note : 1. Measured with outputs open.
2. Refresh period is 32ms.
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD=2.5V+ 5%, VDDQ=2.5V+ 5%,TA=0 to 65°C)
Parameter
Symbol
Min
Typ
Max
Unit
Input High (Logic 1) Voltage; DQ
VIH
VREF+0.35
-
-
V
Input Low (Logic 0) Voltage; DQ
VIL
-
-
VREF-0.35
V
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VDDQ+0.6
V
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
Note
1
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
3. For the K4D261638F-TC25/2A, VDD & VDDQ = 2.8V+0.1V.
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Rev. 1.2 (Jan. 2004)