K4F170811D Datasheet, PDF (14/20 Pages) Samsung semiconductor – 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode

K4F170811D, K4F160811D
K4F170812D, K4F160812D
FAST PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
CMOS DRAM
VIH -
RAS
VIL -
tRASP
tRP
tRHCP
¡ó
VIH -
CAS
VIL -
VIH -
A
VIL -
tCRP
tASR
tRCD
tRAD
tASC
tRAH
tPC
tCAS
tCSH
tCAH
ROW
ADDR
COLUMN
ADDRESS
tPC
tCP
tCAS
¡ó
tASC tCAH
COLUMN ^¡ó
ADDRESS
¡ó
tCP
tRSH
tCAS
tASC
tRAL
tCAH
COLUMN
ADDRESS
VIH -
W
VIL -
tWCS
tWCH
tWP
tWCS
tWCH
¡ó
tWP
tWCS
tWCH
tWP
VIH -
OE
VIL -
tCWL
tCWL
¡ó
¡ó
tCWL
tRWL
DQ0 ~ DQ3(7)
VIH -
VIL -
tDS tDH
VALID
DATA-IN
tDS tDH
¡ó
VALID
DATA-IN
¡ó
tDS tDH
VALID
DATA-IN
Don′t care
Undefined